N-polar iii-nitride transistors

ABSTRACT

An N-polar III-N transistor includes a III-N buffer layer, a first III-N barrier layer, and a III-N channel layer, the III-N channel layer having a gate region and a plurality of access regions on opposite sides of the gate region. The compositional difference between the first III-N barrier layer and the III-N channel layer causes a conductive channel to be induced in the access regions of the III-N channel layer. The transistor also includes a source, a gate, a drain, and a second III-N barrier layer between the gate and the III-N channel layer. The second III-N barrier layer has an N-face proximal to the gate and a group-III face opposite the N-face, and has a larger bandgap than the III-N channel layer. The lattice constant of the first III-N barrier layer is within 0.5% of the lattice constant of the buffer layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. application Ser. No. 13/859,635, filed onApr. 9, 2013, which claims priority to U.S. Provisional Application No.61/621,956, filed on Apr. 9, 2012. The disclosures of the priorapplications are considered part of and are incorporated by reference inthe disclosure of this application.

TECHNICAL FIELD

This invention relates to transistors formed of III-Nitride materialshaving a nitrogen-polar (N-polar) orientation.

BACKGROUND

Currently, typical power semiconductor transistors, including devicessuch as power MOSFETs and insulated gate bipolar transistors (IGBTs),are fabricated with silicon (Si) semiconductor material. More recently,silicon carbide (SiC) power devices have been considered due to theirsuperior properties. III-Nitride or III-N semiconductor devices, such asgallium nitride (GaN) devices, are now emerging as attractive candidatesto carry large currents, support high voltages and to provide very lowon-resistance and fast switching times.

Typical III-N high electron mobility transistors (HEMTs) and relateddevices are formed on III-Nitride materials grown in a group-III polarorientation, such as the [0 0 0 1] (C-plane) orientation. That is, thesource, gate, and drain electrodes of the HEMT are formed over thegroup-III face (e.g., [0 0 0 1] face) of the III-N material layers,which is typically on an opposite side of the III-N material layers fromthe substrate on which the III-N layers are formed. Furthermore, III-NHEMTs are typically normally-on devices, which means that they conductcurrent when zero voltage is applied to the gate relative to the source.These normally on devices are known as depletion mode (D-mode) devices.However, it is more desirable in power electronics to have normally-offdevices, called enhancement mode (E-mode) devices, that do not conductsubstantial current at zero gate voltage and require a sufficientlypositive voltage applied to the gate relative to the source in order toturn on. The use of E-mode devices in power electronics can help reducethe potential for damage to the device or to other circuit components bypreventing accidental turn on of the device in case of circuit failure.

SUMMARY

In a one aspect of the invention, an N-polar III-N transistor isdescribed. The transistor includes a III-N buffer layer having a firstlattice constant, and a first III-N barrier layer having a secondlattice constant on the III-N buffer layer. The transistor furtherincludes a III-N channel layer on the III-N buffer layer, the III-Nchannel layer having a gate region and a plurality of access regions onopposite sides of the gate region. A compositional difference betweenthe first III-N barrier layer and the III-N channel layer causes aconductive channel to be induced in the plurality of access regions ofthe III-N channel layer. The transistor also includes a source, a gate,a drain, and a second III-N barrier layer between the gate and the III-Nchannel layer. The second III-N barrier layer has an N-face proximal tothe gate and a group-III face opposite the N-face, and the second III-Nbarrier layer has a larger bandgap than the III-N channel layer. Thesecond lattice constant is within 0.5% of the first lattice constant.

In a second aspect of the invention, another N-polar III-N transistor isdescribed. The transistor includes a source, a gate, a drain, a III-Nbuffer layer having a first lattice constant, and a first III-N barrierlayer having a second lattice constant on the III-N buffer layer. Thetransistor also includes a III-N channel layer between the III-N bufferlayer and the gate, the III-N channel layer having an N-face proximal tothe gate and a group-III face opposite the N-face. The bandgap of theIII-N channel layer is smaller than that of the first III-N barrierlayer. The thickness of the III-N channel layer is less than 10nanometers, and the sheet resistance of the conductive channel formed inan access region of the transistor is less than 400 ohms/square.

In a third aspect of the invention, another N-polar III-N transistor isdescribed. The transistor includes a source, a gate, a drain, a III-Nbuffer layer having a first lattice constant, and a first III-N barrierlayer having a second lattice constant on the III-N buffer layer. Thetransistor also includes a III-N channel layer on the first III-Nbarrier layer, the III-N channel layer having an N-face proximal to thegate and a group-III face opposite the N-face. The III-N channel layerhas a smaller bandgap than the first III-N barrier layer and includes agate region beneath the gate. The transistor further includes a secondIII-N barrier layer between the gate and the III-N channel layer. Thesecond III-N barrier layer has a larger bandgap than the III-N channellayer. The second lattice constant is within 0.5% of the first latticeconstant, and the transistor is configured such that a conductivechannel is induced in the gate region of the III-N channel layer duringa first mode of operation where a positive voltage is applied to thegate relative to the source, but not during a second mode of operationwhere 0 Volts is applied to the gate relative to the source.

In a fourth aspect of the invention, an enhancement-mode N-polar III-Ntransistor is described. The transistor includes a source, a gate, and adrain. The transistor also includes a first III-N barrier layer and afirst III-N channel layer on the first III-N barrier layer. The firstIII-N channel layer has an N-face proximal to the gate and a group-IIIface opposite the N-face. The first III-N channel layer also has asmaller bandgap than the first III-N barrier layer, and the III-Nchannel layer includes a gate region beneath the gate and access regionson opposite sides of the gate region. The transistor further includes asecond III-N barrier layer between the gate and the first III-N channellayer, the second III-N barrier layer having a larger bandgap than thefirst III-N channel layer. The transistor also includes a second III-Nchannel layer over the access regions of the first III-N channel layer,the second III-N channel layer including a first conductive channel andhaving a smaller bandgap than the second III-N barrier layer. Thetransistor is configured such that when a positive voltage is applied tothe gate relative to the source, a second conductive channel is inducedin the gate region of the first III-N channel layer, and the firstconductive channel and the second conductive channel are electricallycoupled to form a conductive path extending from the source to thedrain.

The transistors described herein can include one or more of thefollowing features. A thickness and aluminum fractional composition of aportion of the second III-N barrier over the gate region of the III-Nchannel layer can be selected to cause the channel to be induced in theaccess regions without being induced in the gate region when 0V isapplied to the gate relative to the source. The second III-N barrier canbe over the gate region but not over the plurality of access regions ofthe III-N channel layer. A thickness and aluminum fractional compositionof the second III-N barrier can be selected such that in a first mode ofoperation where 0V is applied to the gate relative to the source, theconductive channel is induced in the plurality of access regions withoutbeing induced in the gate region. The transistor can be configured suchthat in a second mode of operation where a positive voltage is appliedto the gate relative to the source, the conductive channel is induced inthe gate region and in the plurality of access regions of the III-Nchannel layer. The second III-N barrier layer can have a third latticeconstant within 0.5% of the first lattice constant.

The first III-N barrier layer can include an Al_(x)In_(1-x)N layer, andx can be between 82 and 83 or between 81 and 84. The transistor canfurther include an Al_(z)Ga_(1-z)N or AlN layer. The Al_(z)Ga_(1-z)N orAlN layer can be between the Al_(x)In_(1-x)N layer and the III-N channellayer. The thickness of the III-N channel layer can be less than 10nanometers. The transistor can be configured such that in a first modeof operation where 0V is applied to the gate relative to the source, theconductive channel is induced in the plurality of access regions withoutbeing induced in the gate region of the III-N channel layer, and in asecond mode of operation where a positive voltage is applied to the gaterelative to the source, the conductive channel is induced in the gateregion and in the plurality of access regions of the III-N channellayer. The III-N buffer layer can comprise GaN. The III-N channel layercan comprise GaN. The first III-N barrier layer can compriseAl_(x)In_(y)Ga_(1-x-y)N, and the ratio x/y can be between 82/18 and83/17 or between 81/19 and 84/16. The transistor can further comprise anAl_(z)Ga_(1-z)N or AlN layer. The Al_(z)Ga_(1-z)N or AlN layer can bebetween the Al_(x)In_(y)Ga_(1-x-y)N layer and the III-N channel layer.The thickness of the III-N channel layer can be less than 10 nanometers.

The second lattice constant can be within 0.5% of the first latticeconstant. The transistor can further include a second III-N barrierlayer between the gate and the III-N channel layer, wherein the secondIII-N barrier layer has a larger bandgap than the III-N channel layer.The second III-N barrier can be over a gate region of the transistor butnot over the access region of the transistor. The thickness and aluminumfractional composition of the second III-N barrier can be selected suchthat in a first mode of operation where 0V is applied to the gaterelative to the source, the conductive channel is induced in theplurality of access regions without being induced in the gate region.The transistor can be configured such that in a second mode of operationwhere a positive voltage is applied to the gate relative to the source,the conductive channel is induced in the gate region and in theplurality of access regions of the III-N channel layer. The first III-Nbarrier layer can comprise an Al_(x)In_(1-x)N or Al_(x)In_(y)Ga_(1-x-y)Nlayer. The threshold voltage of the transistor can be greater than 2Volts. The breakdown voltage of the transistor can be greater than 300Volts.

The III-N channel layer can be a first III-N channel layer, and thetransistor can further comprise a second III-N channel layer having asmaller bandgap than the second III-N barrier layer, wherein the secondIII-N barrier layer is between the first III-N channel layer and thesecond III-N channel layer. The second III-N channel layer can include arecess or an aperture, and the gate can be in the recess or aperture.The compositional difference between the second III-N barrier layer andthe second III-N channel layer can cause a second conductive channel tobe induced in the second III-N channel layer. During the first mode ofoperation the conductive channel in the gate region of the first III-Nchannel layer and the second conductive channel in the second III-Nchannel layer can form a continuous electrically conductive pathextending from the source to the drain. The transistor can furthercomprise a III-N cap layer, for example and AlInN cap layer, over thesecond III-N channel layer. The III-N buffer layer or the first III-Nchannel layer can comprise GaN. The second III-N channel layer cancomprise GaN. The transistor can be configured such that when thetransistor is in the ON state and conducting current from the drain tothe source, the current flows through both the first and secondconductive channels.

The details of one or more embodiments of the subject matter describedin this specification are set forth in the accompanying drawings and thedescription below. Other features, aspects, and advantages of thesubject matter will become apparent from the description, the drawings,and the claims.

DESCRIPTION OF DRAWINGS

FIGS. 1 and 2 are cross-sectional views of N-polar III-Nitrideenhancement-mode transistors.

FIG. 3A is a cross-sectional view of an N-polar III-Nitrideenhancement-mode transistor while biased in the OFF state.

FIG. 3B is a cross-sectional view of the transistor of FIG. 3A whilebiased in the ON state.

Like reference symbols in the various drawings indicate like elements.

DETAILED DESCRIPTION

Described herein are III-Nitride (i.e., III-N) transistors, and inparticular enhancement-mode (E-mode) III-N transistors, for which theIII-N material is oriented in an N-polar direction. The N-polar (i.e.,N-face) III-N material structure is prepared either by directly growingN-polar III-N layers on a suitable substrate such as silicon, SiliconCarbide (SiC), sapphire, Aluminum Nitride (AlN), or Gallium Nitride(GaN), or by growing the layers in reverse order in a group-III polarorientation and then accessing an N-face of the III-N material structurefrom the reverse side of the direction of growth, for example byremoving the growth substrate and optionally by removing a portion ofthe III-N material that was directly adjacent to the growth substrate.As used herein, the terms III-Nitride or III-N materials, layers,devices, etc., refer to a material or device comprised of a compoundsemiconductor material according to the stoichiometric formulaB_(w)Al_(x)In_(y)Ga_(z)N, where w+x+y+z is about 1, 0≦w≦1, 0≦x≦1, 0≦y≦1,and 0≦z≦1. In a III-Nitride or III-N device, such as a transistor orHEMT, the conductive channel can be partially or entirely containedwithin a III-N material layer.

An exemplary N-polar III-Nitride E-mode device is shown in FIG. 1.Layers 12, 14, 16, and 18 are N-polar III-N layers, oriented as shown inthe [0 0 0 −1] direction. The III-N layers 12, 14, 16, and 18 areoptionally on a substrate 10 such as silicon, SiC, sapphire, AlN, GaN,or other substrate material suitable for epitaxial growth of III-Nitridelayers. In some implementations the substrate 10 may be omitted. A gate23 is over III-N layer 18, with an insulating layer 20 optionallyincluded between gate 23 and layer 18. As seen, the source and draincontacts 21 and 22, as well as the gate 23, are all formed over theN-face (e.g., [0 0 0 −1] face) of the III-N material layers, which is onan opposite side of the III-N material layers from the substrate 10.Source and drain contacts 21 and 22, respectively, are on opposite sidesof the gate 23 and contact the device 2DEG channel 19 that is formed inlayer 16. The portions of the III-N materials directly below the gate 23are referred to as the gate region of the device. The portions of theIII-N materials directly below the source and drain 21 and 22, arerespectively referred to as the source and drain regions of the device.The portions of III-N material between the gate region and the sourceregion, and between the gate region and the drain region, are referredto as the device access regions.

Layer 12 is a III-N buffer layer, which can for example be GaN. Thebuffer layer 12 can be rendered insulating or substantially free ofn-type mobile carriers by including dislocations or point defects in thelayer, or by doping the layer with compensating elements, such as Fe, C,and/or Mg. The buffer layer can have a substantially uniform compositionthroughout, or the composition can vary. For example, in someimplementations the buffer layer is graded, such as by grading thealuminum composition in the buffer layer. The buffer layer 12 can besubstantially thicker than any of the other III-Nitride layers in thestructure. For example, buffer layer 12 may have a thickness that is atleast 10 times, but typically at least 30 times, the combined thicknessof the III-N layers between buffer layer 12 and the gate 23.

Layer 14 is a back-barrier III-N layer (i.e., a first III-N barrierlayer). Layer 16 is a III-N channel layer, which can be formed of GaN.Layer 18 is a gate-barrier III-N layer (i.e., a second III-N barrierlayer). The back-barrier III-N layer 14 has a larger bandgap than thechannel layer 16, such that a 2DEG channel 19 is induced in the accessregions of the channel layer 16 adjacent the interface between theback-barrier III-N layer 14 and the channel layer 16.

The portion of the 2DEG in the access regions is populated withconductive charge both when the gate 23 is biased relative to the source21 at a voltage greater than the device threshold voltage, and when thegate 23 is biased relative to the source 21 at a voltage less than thedevice threshold voltage. In order to prevent surface roughening at thesurface of channel layer 16 closest to back-barrier layer 14, backbarrier layer 14 can have a lattice constant that is within 0.5% orwithin 0.2% of that of the buffer layer 12. For example, when at least asubstantial portion of the thickness of layer 12, for example at leasthalf the thickness of layer 12, is GaN, layer 14 can beAl_(x)In_(y)Ga_(z)N, where x+y+z is about 1 and the ratio x/y is betweenabout 81/19 and 84/16. In other implementations, layer 14 includesAlInN, where the Al composition is between 0.82 and 0.83 or between 0.81and 0.84.

It has been found that when back barrier layer 14 has a lattice constantthat is within 0.5%, or within 0.2% of that of the buffer layer 12, boththe sheet charge carrier density and the carrier mobility in the 2DEG inthe access regions is increased, resulting in a substantially lowersheet resistance of the 2DEG in the access regions. For example, whenAl.₈₂In.₁₈N is used for the back barrier layer 14 and GaN is used forthe buffer layer 12 and for the channel layer 16, a sheet charge carrierdensity of about 1.7×10¹³ cm⁻³ and a mobility of about 1100 cm²/V·s isachieved, resulting in a sheet resistance of about 334 ohms/square,which is less than 400 ohms/square. This is a substantially lower sheetresistance than has previously been reported for N-polar III-N devices.For comparison, when the back barrier layer in the structure describedabove was replaced with an Al_(w)Ga_(1-w)N layer with w between 0.41 and0.61, the highest sheet charge carrier density achieved was about1.3×10¹³ cm⁻³, which occurred when w=0.41. The highest mobility achievedwas about 524 cm²/V·s, which occurred when w=0.61. The lowest sheetresistance achieved was greater than 1090 ohms/square, which alsooccurred when w=0.61. It was unexpected that such an improvement in the2DEG sheet charge carrier density, mobility, and sheet resistance couldbe achieved by utilizing a back barrier layer with a lattice constantthat is within 0.5%, or within 0.2% of that of the buffer layer.

In some implementations, an additional AlN layer or Al_(x)Ga_(1-x)Nlayer (not shown), preferably with x>0.5, is included either betweenlayers 14 and 16 or between layers 12 and 14, or both. The additionalAlN or Al_(x)Ga_(1-x)N layer(s) can have a larger bandgap than theback-barrier layer 14, and may have a lattice constant which is smallerthan that of buffer layer 12, in order to increase the charge density inthe portion of 2DEG 19 which is in the device access regions.

In order to minimize the resistance of the channel in the device accessregions (i.e., the access resistance of the device), such that resistivelosses are not too large in high-voltage switching applications, thesheet resistance of the 2DEG 19 in the access regions should be keptbelow 400 ohms/square. The access resistance typically increases withdecreasing n-type impurity concentration in layer 14, decreasingthickness of layer 14, and decreasing thickness of layer 16. Forexample, if layer 14 is AlInN that has a thickness of about 15nanometers and is doped with n-type impurities at a concentration ofabout 4×10¹⁸ cm⁻³, the thickness of the channel layer can be less than15 nm, but is typically less than 10 nm. In devices that have such a lowaccess resistance, the carrier concentration in the portion of the 2DEG19 which is in the access regions is typically greater than 1×10¹³ cm⁻²,and can be as high as 1.7×10¹³ cm⁻² or higher. In previous N-polarE-mode transistors that do not include a back-barrier having a latticeconstant so closely matched to that of the buffer layer 12, such lowaccess sheet resistances could not be achieved with such a thin channellayer 16, i.e., less than 10 nanometers. Having such a thin channellayer can improve the coupling between the gate and the channel in thegate region, as well as relaxing the requirements necessary forachieving an E-mode device, as will be described below.

Still referring to FIG. 1, III-N layer 18 depletes the portion of the2DEG channel 19 in the gate region, such that when 0V is applied to thegate relative to the source, the 2DEG 19 is substantially depleted inthe gate region and the device is in the off state. A positive voltagemust be applied to the gate relative to the source in order to populatethe 2DEG 19 in the gate region with carriers (electrons) and therebyturn the device on. The minimum gate voltage (relative to the source)required to turn the device on is known as the device threshold voltage.

In order for the portion of 2DEG channel 19 in the gate region to bedepleted of mobile charge when 0V is applied to the gate 23 relative tothe source 21, layer 18 is sufficiently thick, for example thicker than10 nanometers, and typically has a bandgap that is greater than that ofchannel layer 14, which can be achieved by ensuring that layer 18 has asufficiently large aluminum fractional composition. To enable asufficiently thick gate-barrier layer 18, the gate barrier layer 18 canbe formed of a III-N material having a lattice constant that is within0.5% or within 0.2% of that of the buffer layer 12. For example, when atleast a substantial portion of the thickness of layer 12 (i.e., at leasthalf the thickness of layer 12) is GaN, layer 18 can beAl_(x)In_(y)Ga_(z)N, where x+y+z is about 1 and the ratio x/y is betweenabout 81/19 and 84/16. In some implementations, layer 18 includes AlInN(i.e., Al_(x)In_(1-x)N), where the Al composition x is between 0.82 and0.83.

In many cases, layer 18 is unintentionally doped n-type, for example asa result of impurities being incorporated into the layer during growth.Layer 18 can therefore include p-type dopants to counterbalance theincorporated n-type impurities and further increase the thresholdvoltage of the device. In cases where layer 18 is substantially depletedof mobile charge carriers, the device can be formed either with orwithout insulator layer 20. However, if the p-type dopants induce asubstantial concentration of holes in the gate-barrier layer 18, thedevice may be rendered inoperable if the insulator layer 20 is included.In this case, the device is formed without an insulator layer 20 betweengate 23 and layer 18, or with gate 23 contacting at least a portion ofthe surface of layer 18 closest to the gate 23.

As seen in FIG. 2, in some implementations layer 18 extends all the wayfrom source 21 to drain 22, or at least a portion of layer 18 is overthe portion of 2DEG channel 19 in the access regions. In order to ensurethat the portion of the 2DEG channel 19 in the access regions is notdepleted of mobile charge, which would render the device inoperable, theportion of layer 18 in the access regions is made thinner than theportion beneath the gate. Alternatively, the portion of layer 18 in theaccess regions could have a lower p-type doping concentration than theportion of layer 18 underneath the gate.

Another N-polar III-Nitride E-mode transistor 300 is shown in FIGS. 3Aand 3B. FIG. 3A illustrates the transistor 300 while 0V is applied tothe gate relative to the source, such that the transistor is biased OFF,and FIG. 3B illustrates the transistor 300 when a positive voltagegreater than the threshold voltage of the transistor is applied to thegate relative to the source, such that the transistor is biased ON.Similarly to the transistors of FIGS. 1 and 2, transistor 300 optionallyincludes a substrate 10, and also includes a III-N buffer layer 12 and afirst III-N barrier layer 14 on the III-N buffer layer 12. A first III-Nchannel layer 26 is on the first III-N barrier layer 14, and a secondIII-N barrier layer 28 is on the first III-N channel layer 26.Transistor 300 also includes a second III-N channel layer 36 on thesecond III-N barrier layer 28, and optionally includes a III-N cap layer32 on the second III-N channel layer 36. An aperture or recess 37 isformed in the III-N channel layer 36 over the gate region of thetransistor. In FIG. 3A, layers 30 and 33 already have been formed inthis aperture or recess. The aperture or recess 37 is shown to extendthrough the entire thickness of the III-N channel layer 36, but it mayoptionally extend only partially through the III-N channel layer 36 (notshown). When the III-N cap layer 32 is included, the aperture or recess37 is formed through the entire thickness of the III-N cap layer 32, asshown, before layer 30 and gate 33 are formed. After forming the recessor aperture 37, insulator layer 30 is deposited conformally over theexposed upper surface of III-N material, including in the recess oraperture 37, as shown. Gate 33 is then formed over the insulator layerand is at least partially in the recess or aperture 37. Source and draincontacts 21 and 22, respectively, are on opposite sides of the gate 33.In some implementations, insulator layer 30 is not included, and gate 33is formed directly on the III-N material layers (not shown).

The compositions and thicknesses of the layers in transistor 300 areselected as follows. As in the transistors of FIGS. 1 and 2, the III-Nbuffer layer 12 can be substantially thicker than any of the otherIII-Nitride layers in the structure. For example, layer 12 may have athickness that is at least 10 times, but typically at least 30 times,the combined thickness of the other III-N layers. In someimplementations, the III-N buffer layer includes or is formed of GaN. Inother implementations, the upper portion of the III-N buffer layer 12(i.e., the portion of layer 12 closest to layer 14) is GaN. When theIII-N buffer layer 12 is substantially thicker than the otherIII-Nitride layers in the structure, the other III-N layers are strainedunless their lattice constants are about the same as that of the III-Nbuffer layer 12.

The first III-N barrier layer 14 may have a lattice constant that issubstantially the same as that of III-N buffer layer 12, such that thefirst III-N barrier layer 14 is under little or no strain. That is, thelattice constant of the first III-N barrier layer 14 may be within 0.5%or within 0.2% of the lattice constant of the III-N buffer layer 12. Thefirst III-N barrier layer 14 also has a bandgap which is larger thanthat of the first III-N channel layer 26. For example, when the firstIII-N channel layer 26 and the upper portion of the III-N buffer layer12 are GaN, the first III-N barrier layer 14 can be formed of or includeAlInN (i.e., Al_(x)In_(1-x)N), where the Al composition x is between0.82 and 0.83 or between 0.81 and 0.84. Alternatively, when the firstIII-N channel layer 26 and the upper portion of the III-N buffer layer12 are GaN, the first III-N barrier layer 14 can be formed of or includeAl_(x)In_(y)Ga_(z)N, where x+y+z is about 1 and the ratio x/y is betweenabout 81/19 and 84/16. In some implementations, an additional AlN layeror Al_(x)Ga_(1-x)N layer (not shown), preferably with x>0.5, is includedeither between layers 14 and 26 or between layers 12 and 14, or both.The additional AlN or Al_(x)Ga_(1-x)N layer(s) can have a larger bandgapthan that of the first III-N barrier layer 14, and may have a latticeconstant which is smaller than that of III-N buffer layer 12, in orderto increase the charge density in the second 2DEG 39 (shown in FIG. 3B)which is induced in the first III-N channel layer 26 when the gate oftransistor 300 is biased on, as further described below.

The second III-N barrier layer 28 has a bandgap which is larger thanthat of both the first III-N channel layer 26 and the second III-Nchannel layer 36, and the composition of layer 28 can be selected suchthat its lattice constant is substantially the same as that of III-Nbuffer layer 12, so that the second III-N barrier layer 28 is underlittle or no strain. That is, the lattice constant of the second III-Nbarrier layer 28 may be within 0.5% or within 0.2% of the latticeconstant of the III-N buffer layer 12. For example, when the first andsecond III-N channel layers 26 and 36, as well as the upper portion ofthe III-N buffer layer 12, are all GaN, the second III-N barrier layer28 can be formed of or include AlInN (i.e., Al_(x)In_(1-x)N), where theAl composition x is between 0.82 and 0.83 or between 0.81 and 0.84.Alternatively, the second III-N barrier layer 28 can be formed of orinclude Al_(x)In_(y)Ga_(z)N, where x+y+z is about 1 and the ratio x/y isbetween about 81/19 and 84/16. In another implementation, the secondIII-N barrier layer 28 can be formed of or include AlN or AlGaN, havinga larger bandgap than both layers 26 and 36, but having a smallerlattice constant than the III-N buffer layer 12.

The thickness of the second III-N barrier layer 28 is selected to belarge enough that the second 2DEG 39 is substantially depleted ofcharge, or mobile charge is not induced in the gate region of the firstIII-N channel layer 26, when 0 Volts is applied to the gate 33 relativeto the source 21, as illustrated in FIG. 3A. That is, during thefabrication of transistor 300, immediately after the formation of layer26 and before the formation of any of the layers overlying layer 26, a2DEG channel (not shown) is induced in layer 26 adjacent to theinterface between layers 26 and 14. As layer 28 is deposited over layer26, the charge concentration in the induced 2DEG gradually decreases aslayer 28 is made thicker. There exists a minimum thickness for layer 28,the minimum thickness depending on the compositions of layers 26 and 28as well as the thickness of layer 26, such that when layer 28 is grownthicker than this minimum thickness, the induced 2DEG becomessubstantially depleted of charge and hence ceases to be conductive. Intransistor 300, layer 28 is made thicker than this minimum thickness,thereby ensuring that 2DEG 39 is induced in the gate region of the firstIII-N channel layer 26 when a positive voltage greater than thetransistor threshold voltage is applied to the gate 33 relative to thesource 21, but not when 0V is applied to the gate relative to thesource. For example, when the first III-N channel layer 26 is GaN and isabout 5 nanometers or thinner, and the second III-N barrier layer 28 isAl._(w)In._(1-w)N with w approximately in the range of 0.82 to 0.83,layer 28 can be at least 2 nanometers, between 2 and 10 nanometers, orbetween 2 and 6 nanometers.

The second III-N channel layer 36, which can for example be formed of orinclude GaN, has a smaller bandgap than the second III-N barrier layer28, such that 2DEG channel 29 is induced in layer 36 both when the gateof transistor 300 is biased ON and when the gate of transistor 300 isbiased OFF. For a given composition of layers 28 and 36, the mobilecharge density in 2DEG 29 depends on the thickness of layer 36.Increasing the thickness of layer 36 tends to increase the mobile chargecarrier density in 2DEG channel 29. Having a higher 2DEG mobile carrierdensity can decrease the sheet resistance in the access regions of thetransistor 300, leading to lower conductive losses in the transistorduring operation. However, a higher 2DEG mobile carrier density alsoresults in a lower breakdown voltage of the device. Hence, when thetransistor 300 is used in applications that require a minimum transistorbreakdown voltage, the thickness of layer 36 can be selected such thatthe resulting 2DEG mobile carrier density is about equal to or justbelow the carrier density that results in the transistor having therequired minimum breakdown voltage.

In some implementations, an additional AlN layer or Al_(x)Ga_(1-x)Nlayer (not shown), preferably with x>0.5, is included either betweenlayers 28 and 26 or between layers 28 and 36, or both. The additionalAlN or Al_(x)Ga_(1-x)N layer(s) can have a larger bandgap than that ofthe second III-N barrier layer 28, and may have a lattice constant whichis smaller than that of III-N buffer layer 12, in order to increase thecharge density and/or the mobility of the 2DEG 29 which is induced inthe second III-N channel layer 36 in the access regions of thetransistor 300.

The III-N cap layer 32, when included in transistor 300, can have alarger bandgap than the second III-N channel layer 36, which in someimplementations increases the breakdown voltage of the transistor.Alternatively, the cap layer 32 may have a bandgap which is smaller thanor similar to that of layer 36, provided the conduction band edge of thecap layer 32 at the interface between layers 32 and 36 is at a higherabsolute energy than the conduction band edge of the layer 36 at theinterface between layers 32 and 36. III-N cap layer 32 may also bedesigned to have a similar lattice constant to that of III-N bufferlayer 12. For example, when layers 12 and 36 are both GaN, the III-N caplayer 32 can be formed of or include AlInN (i.e., Al_(x)In_(1-x)N),where the Al composition x is between 0.82 and 0.83 or between 0.81 and0.84. Alternatively, the III-N cap layer 32 can be formed of or includeAl_(x)In_(y)Ga_(z)N, where x+y+z is about 1 and the ratio x/y is betweenabout 81/19 and 84/16. Including the III-N cap layer 32 increases theseparation between the uppermost III-N surface and the 2DEG 29 in theaccess regions of the transistor 300, which can reduce dispersion in thetransistor during operation.

Insulator layer 30, which can for example be formed of or includesilicon nitride, aluminum oxide, aluminum nitride, silicon dioxide, orvarious combinations of these insulator materials, serves as a gateinsulator layer, which reduces gate leakage in the device. Insulatorlayer 30 can also serve as a surface passivation layer in the accessregions of the transistor 300, in order to minimize or reduce dispersiontransistor during operation.

The transistor 300 of FIGS. 3A and 3B operates as follows. As seen inFIG. 3A, when the transistor 300 is biased OFF, for example with 0 Voltsapplied to the gate 33 relative to the source 21, conductive 2DEGchannel 29 is in the access regions of the transistor 300 in layer 36,but no conductive channel is present in the gate region of thetransistor. Referring to FIG. 3B, when the transistor 300 is biased ON,for example by applying a sufficiently positive voltage to the gate 33relative to the source 21, 2DEG channel 39 is induced in layer 26 in thegate region of the device. The positive gate voltage can also induceconductive portions 49, which electrically connect 2DEGs 29 and 39,thereby forming a continuous electrically conductive path extending fromthe source 21 to the drain 22.

Still referring to FIG. 3B, having the portion of the channel in theaccess regions be in a different layer from the portion of the channelin the gate region can be advantageous in that the design parameters forthe gate and access regions of the device can be decoupled from oneanother. That is, in the transistors of FIGS. 1 and 2, designing thedevice to have a higher mobile carrier charge density in the accessregions of the transistor reduces the maximum threshold voltage that canbe obtained for the transistor. On the other hand, for transistor 300 ofFIGS. 3A and 3B, the transistor threshold voltage and the mobile carriercharge density in the access regions of the transistor can be controlledindependently of one another. For example, the thickness of layers 26and 28 can be selected to produce the desired threshold voltage of thetransistor, and the thickness of layer 36 can then be selected toproduce the desired charge density in 2DEG 29 in the device accessregions, since varying the thickness of layer 36 does not substantiallyvary the transistor threshold voltage. For example, layers 26 and 28 caneach be less than 6 nanometers thick, such as about 3 nanometers thick,while layer 36 can be greater than 10 nanometers thick, such as about 15nanometers thick. Having the device channel in the access regions of thedevice be in a different layer from the device channel in the gateregion of the device, and in particular having layer 36 (which containsthe 2DEG in the device access regions) be at least 2 times or at least 3times as thick as layer 26 (which contains the 2DEG in the gate regionof the device), can result in an N-Polar enhancement-mode III-Nitridetransistor having a breakdown voltage greater than 300 Volts or greaterthan 600 Volts, a channel sheet resistance of less than 400 ohms/squarein the access regions of the device while maintaining a thresholdvoltage of at least 2 Volts. Furthermore, because the source and draincontacts 21 and 22, respectively, do not need to be formed through abarrier layer, the source and drain contact resistances can be less than2 ohm-mm.

A number of implementations have been described. Nevertheless, it willbe understood that various modifications may be made without departingfrom the spirit and scope of the techniques and devices describedherein. For example, an additional AlN layer or Al_(z)Ga_(1-z)N layer(not shown) with z>0.5 or z>0.8 can be included between layers 18 and 16in either device of FIG. 1 or FIG. 2. The additional AlN orAl_(x)Ga_(1-x)N layer can have a larger bandgap than the gate-barrierlayer 18, and may have a lattice constant which is smaller than that ofbuffer layer 12, in order to increase the charge density in the 2DEG 19.Or, the portion of the buffer layer 12 which is closest to barrier layer14 can be undoped or unintentionally doped and can be formed of GaN, andoptionally an n-type III-N layer such as n-type GaN can be includedbetween the buffer layer 12 and the barrier layer 14. Furthermore, III-Nbarrier layer 14 or 28 can be made very thin, and can for example be afinite thickness that is less than 1 nanometer, for example about 0.5nanometers or less. Having such a thin barrier layer can result in alarger mobility for a given charge density in the 2DEG in the transistoraccess regions. As such, a given sheet resistance in the transistoraccess regions can be achieved with a lower 2DEG charge density in theaccess regions, thereby resulting in a larger breakdown voltage.Additionally, in transistor 300 of FIGS. 3A and 3B, an additional p-typeIII-N layer (not shown) can be included between the gate 37 and theunderlying III-N layer 26 or 28 in the recess or aperture 37. When theadditional p-type III-N layer is included, the gate 33 can directlycontact the p-type III-N layer. In this case, the portion of layer 30 inthe gate region can be omitted, such that layer 30 is over the deviceaccess regions but is not in the gate region of the transistor.Accordingly, the scope of the disclosure is governed by the followingclaims.

What is claimed is:
 1. A method of forming an N-polar III-N transistor,comprising: providing a III-N buffer layer having a first latticeconstant; providing a first III-N barrier having a second latticeconstant on the III-N buffer layer; providing a III-N channel layer onthe III-N buffer layer, the III-N channel layer having a gate region anda plurality of access regions on opposite sides of the gate region;providing a source, a gate, and a drain; and providing a second III-Nbarrier layer between the gate and the III-N channel layer, the secondIII-N barrier being over the gate region but not over the plurality ofaccess regions of the III-N channel layer, the second III-N barrierlayer having an N-face proximal to the gate and a group III-faceopposite the N-face, and the second III-N barrier layer having a largerbandgap than the III-N channel layer; wherein a compositional differencebetween the first III-N barrier layer and the III-N channel layer causesa conductive channel to be induced in the plurality of access regions ofthe III-N channel layer; and the second lattice constant is within 0.5%of the first lattice constant.
 2. The method of claim 1, wherein athickness and aluminum fractional composition of the second III-Nbarrier are selected to cause the channel to be induced in the accessregions without being induced in the gate region when 0V is applied tothe gate relative to the source.
 3. The method of claim 1, wherein athickness and aluminum fractional composition of the second III-Nbarrier are selected such that in a first mode of operation where 0V isapplied to the gate relative to the source, the conductive channel isinduced in the plurality of access regions without being induced in thegate region.
 4. The method of claim 3, wherein the transistor isconfigured such that in a second mode of operation where a positivevoltage is applied to the gate relative to the source, the conductivechannel is induced in the gate region and in the plurality of accessregions of the III-N channel layer.
 5. The method of claim 1, whereinthe second III-N barrier layer has a third lattice constant within 0.5%of the first lattice constant.
 6. The method of claim 1, wherein thefirst III-N barrier layer comprises an Al_(x)In_(1-x)N layer.
 7. Themethod of claim 6, wherein x is between 0.82 and 0.83.
 8. The method ofclaim 6, wherein x is between 0.81 and 0.84.
 9. The method of claim 8,further comprising providing an Al_(z)Ga_(1-z)N or AlN layer.
 10. Themethod of claim 9, wherein the Al_(z)Ga_(1-z)N or AlN layer is providedbetween the Al_(x)In_(1-x)N layer and the III-N channel layer.
 11. Themethod of claim 8, wherein a thickness of the III-N channel layer isless than 10 nanometers.
 12. The method of claim 11, wherein thetransistor is configured such that in a first mode of operation where 0Vis applied to the gate relative to the source, the conductive channel isinduced in the plurality of access regions without being induced in thegate region of the III-N channel layer, and in a second mode ofoperation where a positive voltage is applied to the gate relative tothe source, the conductive channel is induced in the gate region and inthe plurality of access regions of the III-N channel layer.
 13. Themethod of claim 8, wherein the III-N buffer layer comprises GaN.
 14. Themethod of claim 8, wherein the III-N channel layer comprises GaN. 15.The method of claim 1, wherein the first III-N barrier layer comprisesAl_(x)In_(y)Ga_(1-x-y)N.
 16. The method of claim 15, wherein a ratio x/yis between 82/18 and 83/17.
 17. The method of claim 15, wherein a ratiox/y is between 81/19 and 84/16.
 18. The method of claim 17, furthercomprising providing an Al_(z)Ga_(1-z)N or AlN layer.
 19. The method ofclaim 18, wherein the Al_(z)Ga_(1-z)N or AlN layer is provided betweenthe Al_(x)In_(y)Ga_(1-x-y)N layer and the III-N channel layer.
 20. Themethod of claim 17, wherein a thickness of the III-N channel layer isless than 10 nanometers.
 21. The method of claim 20, wherein thetransistor is configured such that in a first mode of operation where 0Vis applied to the gate relative to the source, the conductive channel isinduced in the plurality of access regions without being induced in thegate region of the III-N channel layer, and in a second mode ofoperation where a positive voltage is applied to the gate relative tothe source, the conductive channel is induced in the gate region and inthe plurality of access regions of the III-N channel layer.
 22. A methodof forming an N-polar III-N transistor, comprising: providing a III-Nbuffer layer having a first lattice constant; providing a first III-Nbarrier layer having a second lattice constant on the III-N bufferlayer; providing a source, a gate, and a drain; providing a III-Nchannel layer between the III-N buffer layer and the gate, the III-Nchannel layer having an N-face proximal to the gate and a group-III faceopposite the N-face, the III-N channel layer having a smaller bandgapthan the first III-N barrier layer; and providing a second III-N barrierlayer between the gate and the III-N channel layer, the second III-Nbarrier being over a gate region of the transistor but not over anaccess region of the transistor, the second III-N barrier layer having alarger bandgap than the III-N channel layer; wherein a thickness of theIII-N channel layer is less than 10 nanometers; and a sheet resistanceof a conductive channel formed in an access region of the transistor isless than 400 ohms/square.
 23. The method of claim 22, wherein athickness and aluminum fractional composition of the second III-Nbarrier are selected such that in a first mode of operation where 0V isapplied to the gate relative to the source, the conductive channel isinduced in the plurality of access regions without being induced in thegate region.
 24. The method of claim 23, wherein the transistor isconfigured such that in a second mode of operation where a positivevoltage is applied to the gate relative to the source, the conductivechannel is induced in the gate region and in the plurality of accessregions of the III-N channel layer.
 25. The method of claim 22, whereinthe first III-N barrier layer comprises an Al_(x)In_(1-x)N orAl_(x)In_(y)Ga_(1-x-y)N layer.
 26. The method of claim 25, wherein thefirst III-N barrier layer comprises an Al_(x)In_(y)Ga_(1-x-y)N layerwith x/y being between 81/19 and 84/16.
 27. The method of claim 25,wherein x is between 0.81 and 0.84.
 28. The method of claim 27, furthercomprising providing an Al_(y)Ga_(1-y)N or AlN layer between the firstIII-N barrier layer and the III-N channel layer.
 29. The method of claim22, wherein the transistor is configured such that a threshold voltageof the transistor is greater than 2 Volts.
 30. The method of claim 29,wherein the transistor is configured such that a breakdown voltage ofthe transistor is greater than 300 Volts.
 31. A method of forming anenhancement-mode N-polar III-N transistor, comprising: providing a III-Nbuffer layer having a first lattice constant; providing a first III-Nbarrier layer having a second lattice constant on the III-N bufferlayer; providing a source, a gate, and a drain; providing a first III-Nchannel layer on the first III-N barrier layer, the first III-N channellayer having an N-face proximal to the gate and a group-III faceopposite the N-face, the first III-N channel layer having a smallerbandgap than the first III-N barrier layer, the first III-N channellayer including a gate region beneath the gate; providing a second III-Nbarrier layer between the gate and the first III-N channel layer, thesecond III-N barrier layer having a larger bandgap than the first III-Nchannel layer; and providing a second III-N channel layer having asmaller bandgap than the second III-N barrier layer, the second III-Nbarrier layer being between the first III-N channel layer and the secondIII-N channel layer; wherein the second lattice constant is within 0.5%of the first lattice constant; and the transistor is configured suchthat a conductive channel is induced in the gate region of the III-Nchannel layer during a first mode of operation where a positive voltageis applied to the gate relative to the source, but not during a secondmode of operation where 0 Volts is applied to the gate relative to thesource.
 32. The method of claim 31, wherein the second III-N channellayer includes a recess or an aperture, and the gate is in the recess oraperture.
 33. The method of claim 32, wherein a compositional differencebetween the second III-N barrier layer and the second III-N channellayer causes a second conductive channel to be induced in the secondIII-N channel layer.
 34. The method of claim 33, wherein during thefirst mode of operation the conductive channel in the gate region of thefirst III-N channel layer and the second conductive channel in thesecond III-N channel layer form a continuous electrically conductivepath extending from the source to the drain.
 35. The method of claim 34,further comprising providing a III-N cap layer over the second III-Nchannel layer.
 36. The method of claim 34, wherein the III-N bufferlayer or the first III-N channel layer comprises GaN.
 37. The method ofclaim 36, wherein the second III-N channel layer comprises GaN.
 38. Amethod of forming an enhancement-mode N-polar III-N transistor,comprising: providing a first III-N barrier layer; providing a source, agate, and a drain; providing a first III-N channel layer on the firstIII-N barrier layer, the first III-N channel layer having an N-faceproximal to the gate and a group-III face opposite the N-face, the firstIII-N channel layer having a smaller bandgap than the first III-Nbarrier layer, the first III-N channel layer including a gate regionbeneath the gate and access regions on opposite sides of the gateregion; providing a second III-N barrier layer between the gate and thefirst III-N channel layer, the second III-N barrier layer having alarger bandgap than the first III-N channel layer; and providing asecond III-N channel layer over the access regions of the first III-Nchannel layer, the second III-N channel layer including a firstconductive channel and having a smaller bandgap than the second III-Nbarrier layer; wherein the transistor is configured such that when apositive voltage is applied to the gate relative to the source, a secondconductive channel is induced in the gate region of the first III-Nchannel layer, and the first conductive channel and the secondconductive channel are electrically coupled to form a conductive pathextending from the source to the drain.
 39. The method of claim 38,wherein the transistor is configured such that when the transistor is inthe ON state and conducting current from the drain to the source, thecurrent flows through both the first and second conductive channels.